Paper
27 December 2002 High-performance 6-inch EUV mask blanks produced under real production conditions by ion-beam sputter deposition
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Abstract
EUV mask blanks consist of two thin film systems deposited on low thermal expansion 6 inch substrates (LTEM). First there is the multilayer stack with around 100 alternating layers of elements with different optical properties which are topped by a capping layer. The absorber stack which consists of a buffer and a absorber layer is next. Here a minimum absorption of EUV light of 99 % is required. The stress in both layer systems should be as low as possible. The reduction of defects to an absolute minimum is one of the main challenges. The high-reflective Mo/Si multilayer coatings were designed for normal incidence reflectivity and successfully deposited on 6-inch LTEM substrates by ion-beam sputtering. X-ray scattering, transmission electron microscopy and atomic force microscopy were used for characterization of the multilayer interfaces and the surface morphology. The results are correlated to the measured normal incidence reflectivity using synchrotron radiation at the "Physikalisch- Technischen Bundesanstalt" (PTB) refelctometer at BESSY II, Berlin, Germany. A high resolution laser scanner was used to measure the particle distribution. First multilayer defect results are presented.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hans Willy Becker, Frank Sobel, Lutz Aschke, Markus Renno, Juergen Krieger, Ute Buttgereit, Guenter Hess, Frank Lenzen, Konrad Knapp, Sergey A. Yulin, Torsten Feigl, Thomas Kuhlmann, and Norbert Kaiser "High-performance 6-inch EUV mask blanks produced under real production conditions by ion-beam sputter deposition", Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); https://doi.org/10.1117/12.467578
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Cited by 4 scholarly publications.
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KEYWORDS
Reflectivity

Multilayers

Particles

Extreme ultraviolet

Ion beams

Transmission electron microscopy

Silicon

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