Influence of rapid-thermal-annealing-induced cracks on multiple quantum-well laser diode performance

Hoshin H. Yee; Tao-Wei Chou; Chun-Hung Lai; Chia-Hsuan Lin; Meng-Shian Lin; Cheng-Yu Chen

doi:10.1117/12.481005

29 August 2002 Influence of rapid-thermal-annealing-induced cracks on multiple quantum-well laser diode performance

Hoshin H. Yee, Tao-Wei Chou, Chun-Hung Lai, Chia-Hsuan Lin, Meng-Shian Lin, Cheng-Yu Chen

Proceedings Volume 4905, Materials and Devices for Optical and Wireless Communications; (2002) https://doi.org/10.1117/12.481005
Event: Asia-Pacific Optical and Wireless Communications 2002, 2002, Shanghai, China

Abstract

The influence of high-temperature (>870°C) rapid-thermal-annealing (RTA) induced cracks on the laser performance fabricated with GaAs-AlGaAs quantum-well microstructures is reported. The effects were examined and characterized after quantum-well intermixing within an epitaxial structure capped by either SiO₂ or SrF₂ layers. The results show clearly that the density of surface cracks strongly depend on the atomic interdiffusion between the well and the barrier layers, and on the quality of the dielectric caps as well. In addition to the detailed analysis of the cracking effects on the laser performance, an effective way of reducing the density of RTA-induced cracks was also explored for the dielectrics grown by plasma-enhanced chemical vapor deposition under a low-stressed condition.

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Hoshin H. Yee, Tao-Wei Chou, Chun-Hung Lai, Chia-Hsuan Lin, Meng-Shian Lin, and Cheng-Yu Chen "Influence of rapid-thermal-annealing-induced cracks on multiple quantum-well laser diode performance", Proc. SPIE 4905, Materials and Devices for Optical and Wireless Communications, (29 August 2002); https://doi.org/10.1117/12.481005

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KEYWORDS

Annealing

Quantum wells

Dielectrics

Semiconductor lasers

Plasma enhanced chemical vapor deposition

Gallium arsenide

Semiconducting wafers

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