Paper
11 March 2003 Improved beam quality due to current profiling in a broad-area semiconductor laser
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Abstract
We describe the different mechanisms to generate waves in the transverse section of lasers. Our analysis, based on the Maxwell-Bloch equations, is compared to recent experimental results.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John A. Houlihan, Vincent Voignier, James R. O'Callaghan, Guanhong Wu, Guillaume Huyet, John Gerard McInerney, and Brian Corbett "Improved beam quality due to current profiling in a broad-area semiconductor laser", Proc. SPIE 4947, Laser Diodes, Optoelectronic Devices, and Heterogenous Integration, (11 March 2003); https://doi.org/10.1117/12.476265
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KEYWORDS
Near field

Semiconductor lasers

Profiling

Near field optics

Laser damage threshold

Spatial filters

Vertical cavity surface emitting lasers

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