Correlation of optical properties with the microstructure of Si nanocrystals in SiO2 fabricated by ion implantation

Tsutomu Shimizu-Iwayama

doi:10.1117/12.497298

1 April 2003 Correlation of optical properties with the microstructure of Si nanocrystals in SiO₂ fabricated by ion implantation

Tsutomu Shimizu-Iwayama

Author Affiliations +

Proceedings Volume 5024, Selected Papers on Optics and Photonics: Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (2003) https://doi.org/10.1117/12.497298
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 2003, 2003, Moscow, Russian Federation

Abstract

A possible mechanism for the photoemission from Si nanocrystals in an amorphous SiO₂ matrix fabricated by ion implantation is reported. We have measured the implantation dose and the temperature dependence as well as the oxidation effect of the photoluminescence behavior of Si nanocrystals in SiO₂ layers fabricated by ion implantation and a subsequent annealing step. After annealing, a photoluminescence band, peaking just below the 1.7 eV was observed. The peak energy of the photoluminescence was found to be affected by the dose of implanted Si ions and the temperature during ion implantation, but to be independent of annealing time and excitation photon energy. We also present experimental results of an oxidation induced continuous peak energy shift of the photoluminescence peak up to around 1.8 eV. This peak energy, however, was found to return to its previous position with re-annealing. These results indicate that whilst the excitation photons are absorbed by Si nanocrystals, the emission is not simply due to electron-hole recombination inside the Si nanocrystals, but is related to the presence of defects, most likely located at the interface between the Si nanocrystals and the SiO₂, for which the characteristic energy levels are affected by cluster-cluster interactions or the roughness of the interface.

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Tsutomu Shimizu-Iwayama "Correlation of optical properties with the microstructure of Si nanocrystals in SiO₂ fabricated by ion implantation", Proc. SPIE 5024, Selected Papers on Optics and Photonics: Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (1 April 2003); https://doi.org/10.1117/12.497298

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KEYWORDS

Silicon

Luminescence

Nanocrystals

Annealing

Oxidation

Ion implantation

Ions

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