Physical properties of the HCT EUV source

Joseph Pankert; Klaus Bergmann; Juergen Klein; Willi Neff; Oliver Rosier; Stefan Seiwert; Christopher Smith; Sven Probst; Dominik Vaudrevange; Guido Siemons; Rolf Apetz; Jeroen Jonkers; Michael Loeken; Eric Bosch; Guenther H. Derra; Thomas Kruecken; Peter Zink

doi:10.1117/12.483611

16 June 2003 Physical properties of the HCT EUV source

Joseph Pankert, Klaus Bergmann, Juergen Klein, Willi Neff, Oliver Rosier, Stefan Seiwert, Christopher Smith, Sven Probst, Dominik Vaudrevange, Guido Siemons, Rolf Apetz, Jeroen Jonkers, Michael Loeken, Eric Bosch, Guenther H. Derra, Thomas Kruecken, Peter Zink

Author Affiliations +

Proceedings Volume 5037, Emerging Lithographic Technologies VII; (2003) https://doi.org/10.1117/12.483611
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

The paper describes recent progress on the development of an EUV source based on a hollow cathode triggered gas discharge (HCT). The principle of operation has been described in previous publications. When operated with Xe, a repetition frequency up to 4 kHz, conversion efficiency of 0.55% inband radiation in 2π and a pinch size below 3mm in length was demonstrated. Today's requirements on a commercial EUV source for volume production of wafers still exceed the current performance by large factors both in terms of output power and life time. This paper will discuss the roadmap to high power and will also show elements of the way to extended life time. Particular focus will be put onto the physical limits of Xe as radiator and the advantages of using Sn instead. It will be demonstrated that the spectral efficiency of Sn is a factor of 3 higher than Xe.

Citation Download Citation

Joseph Pankert, Klaus Bergmann, Juergen Klein, Willi Neff, Oliver Rosier, Stefan Seiwert, Christopher Smith, Sven Probst, Dominik Vaudrevange, Guido Siemons, Rolf Apetz, Jeroen Jonkers, Michael Loeken, Eric Bosch, Guenther H. Derra, Thomas Kruecken, and Peter Zink "Physical properties of the HCT EUV source", Proc. SPIE 5037, Emerging Lithographic Technologies VII, (16 June 2003); https://doi.org/10.1117/12.483611

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available