CD control at low K1 optical lithography in DRAM device

Jongkyun Hong; Chongsik Woo; Jaewoo Park; Byeong-ho Cho; Jaeseung Choi; Hyunjo Yang; Chan-ha Park; Yong-chul Shin; Youngdea Kim; Goomin Jeong; Jung-chan Kim; Khil-ohk Kang; Chunsoo Kang; Jongwoon Park; Donggyu Yim; Youngwook Song

doi:10.1117/12.485026

2 June 2003 CD control at low K1 optical lithography in DRAM device

Jongkyun Hong, Chongsik Woo, Jaewoo Park, Byeong-ho Cho, Jaeseung Choi, Hyunjo Yang, Chan-ha Park, Yong-chul Shin, Youngdea Kim, Goomin Jeong, Jung-chan Kim, Khil-ohk Kang, Chunsoo Kang, Jongwoon Park, Donggyu Yim, Youngwook Song

Author Affiliations +

Proceedings Volume 5038, Metrology, Inspection, and Process Control for Microlithography XVII; (2003) https://doi.org/10.1117/12.485026
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

In this work, CD control issue at 0.37 K1 optical lithography will be discussed in terms of lens aberration sensitivity. Specific aberration terms that affect CD asymmetry on isolation, word line and storage node layers were investigated by simulation and CD uniformity measurement. The lens aberration was characterized by LITEL ISI (In-Situ Interferometer) and the aberration sensitivity was investigated by Solid-C aerial image simulation. From this result, we can understand the relation between some significant Zernike terms and CD control of DRAM’s critical layers.

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Jongkyun Hong, Chongsik Woo, Jaewoo Park, Byeong-ho Cho, Jaeseung Choi, Hyunjo Yang, Chan-ha Park, Yong-chul Shin, Youngdea Kim, Goomin Jeong, Jung-chan Kim, Khil-ohk Kang, Chunsoo Kang, Jongwoon Park, Donggyu Yim, and Youngwook Song "CD control at low K1 optical lithography in DRAM device", Proc. SPIE 5038, Metrology, Inspection, and Process Control for Microlithography XVII, (2 June 2003); https://doi.org/10.1117/12.485026

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