Doping control in HgCdTe epitaxial layers

Pawel Madejczyk; Leszek Kubiak; Waldemar Gawron

doi:10.1117/12.519770

22 October 2003 Doping control in HgCdTe epitaxial layers

Pawel Madejczyk, Leszek Kubiak, Waldemar Gawron

Proceedings Volume 5136, Solid State Crystals 2002: Crystalline Materials for Optoelectronics; (2003) https://doi.org/10.1117/12.519770
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

The researches on doping technology in HgCdTe LPE layers has become the crucial aspect concerned infrared photodiodes. This paper reviews incorporation and activation of dopants from IB, IIIA, and VA group as well as native defects in HgCdTe LPE layers grown from Te-rich solution. The work has been focused mainly on medium wavelength and long wavelength p-type layers because there is still a lot to do on this subject while n-type layers technology seems to be well established. The impurity issues like: segregation, coefficient, the energy and percentage of activation, and quasichemical approaches are discussed in order to explain impurity behaviour. Various kinds of anomalous of the Hall coefficient and electrical conductivity have frequently been experimentally observed, particularly in low band-gap material (x <0.2) with hole concentration less than 10¹⁷ cm^-3.

Citation Download Citation

Pawel Madejczyk, Leszek Kubiak, and Waldemar Gawron "Doping control in HgCdTe epitaxial layers", Proc. SPIE 5136, Solid State Crystals 2002: Crystalline Materials for Optoelectronics, (22 October 2003); https://doi.org/10.1117/12.519770

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