Advances In The Development Of Semiconductor Integrated Optical Circuits For Telecommunications

A. J.N. Houghton; S. Ritchie; M. J. Robertson

doi:10.1117/12.945137

29 January 1985 Advances In The Development Of Semiconductor Integrated Optical Circuits For Telecommunications

A. J.N. Houghton, S. Ritchie, M. J. Robertson

Proceedings Volume 0517, Integrated Optical Circuit Engineering I; (1985) https://doi.org/10.1117/12.945137
Event: 1984 Cambridge Symposium, 1984, Cambridge, United States

Abstract

Integrated optical circuits will be used in high performance optical systems in the future. This paper reviews progress towards making such circuits using semiconductor substrates. Discrete GaAs/GaAlAs devices have been made and have shown low propagation loss (<2dB/cm), low operating voltage (9V for a Tr phase shift) and the potential for high speed (<500ps rise time). InP devices are less well developed but show promise. The proposed implementation of a laser/waveguide component is described, and the prospect of other integrated optical circuits, including matrix switches, is discussed.

Citation Download Citation

A. J.N. Houghton, S. Ritchie, and M. J. Robertson "Advances In The Development Of Semiconductor Integrated Optical Circuits For Telecommunications", Proc. SPIE 0517, Integrated Optical Circuit Engineering I, (29 January 1985); https://doi.org/10.1117/12.945137

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