31 December 2003 Mask and source optimization for lithographic imaging systems
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Proceedings Volume 5182, Wave-Optical Systems Engineering II; (2003); doi: 10.1117/12.504732
Event: Optical Science and Technology, SPIE's 48th Annual Meeting, 2003, San Diego, California, United States
Abstract
This article proposes a new optimization procedure for mask and illumination geometries in optical projection lithography. A general merit function is introduced that evaluates the imaging performance of arbitrary line patterns over a certain focus range. It also takes into account certain technological aspects that are defined by the manufacturability and inspectability of the mask. Automatic optimization of the mask and illumination parameters with a genetic algorithm identifies optimum imaging conditions without any additional a-priori knowledge about lithographic processes. Several examples demonstrate the potential of the proposed concept.
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Andreas Erdmann, Richard Farkas, Tim Fuehner, Bernd Tollkuehn, Gabriela Kokai, "Mask and source optimization for lithographic imaging systems", Proc. SPIE 5182, Wave-Optical Systems Engineering II, (31 December 2003); doi: 10.1117/12.504732; http://dx.doi.org/10.1117/12.504732
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KEYWORDS
Photomasks

Lithography

Critical dimension metrology

Binary data

Genetic algorithms

Lithographic illumination

Optimization (mathematics)

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