31 December 2003 Wave-optical considerations in photolithography
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Proceedings Volume 5182, Wave-Optical Systems Engineering II; (2003); doi: 10.1117/12.508622
Event: Optical Science and Technology, SPIE's 48th Annual Meeting, 2003, San Diego, California, United States
Abstract
Wave-optical effects are becoming more pronounced as optical lithography is pushed towards its limit. Photomask topography scattering and wafer polarization effects caused by differences in coupling between transverse electric and transverse magnetic waves degrade image quality. But polarization may provide an extra dimension that allows lithographers to devise simple solutions to otherwise difficult problems such as phase assignment.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alfred K. Wong, Christophe Pierrat, "Wave-optical considerations in photolithography", Proc. SPIE 5182, Wave-Optical Systems Engineering II, (31 December 2003); doi: 10.1117/12.508622; http://dx.doi.org/10.1117/12.508622
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KEYWORDS
Photomasks

Polarization

Optical lithography

Semiconducting wafers

Transistors

Critical dimension metrology

Image quality

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