Fabrication of high-lumen InGaN flip chip LEDs

Hari S. Venugopalan; Xiang Gao; Tingting Zhang; Bryan S. Shelton; Anthony DiCarlo; Ivan Eliashevich; Michael Hsing

doi:10.1117/12.514073

26 January 2004 Fabrication of high-lumen InGaN flip chip LEDs

Hari S. Venugopalan, Xiang Gao, Tingting Zhang, Bryan S. Shelton, Anthony DiCarlo, Ivan Eliashevich, Michael Hsing

Proceedings Volume 5187, Third International Conference on Solid State Lighting; (2004) https://doi.org/10.1117/12.514073
Event: Optical Science and Technology, SPIE's 48th Annual Meeting, 2003, San Diego, California, United States

Abstract

The factors critical to the fabrication of high-lumen InGaN flip chip LEDs are discussed. It is shown that as the die size and the current density increase, the n-GaN sheet conductivity becomes extremely critical to uniform current spreading and the corresponding uniformity of light emission. It is observed that a thick p-metal is important in reducing hot spot formation. The p-contact is also critical to increasing light extraction efficiency and wall-plug efficiency. The merits and reliability of Al- and Ag-based p-contacts are compared. Reliability issues related to the n-contact are also discussed. Finally, performance data for InGaN blue lamps, for drive currents up to 900 mA is shown.

Citation Download Citation

Hari S. Venugopalan, Xiang Gao, Tingting Zhang, Bryan S. Shelton, Anthony DiCarlo, Ivan Eliashevich, and Michael Hsing "Fabrication of high-lumen InGaN flip chip LEDs", Proc. SPIE 5187, Third International Conference on Solid State Lighting, (26 January 2004); https://doi.org/10.1117/12.514073

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