Paper
17 December 2003 Influence of antireflection coatings in ArF lithography
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Abstract
The impact of wafer and reticle anti-reflection coatings (ARCs) on the aerial image of ArF lithography scanners is measured using contrast curves and critical dimension (CD) analysis. The importance of a good ARC layer on the wafer appears to be greater than that of the reticle-ARC. In fact, for state-of-the-art lithography scanners, the influence of the reticle-ARC is practically undetectable. Numerical simulations are used to understand the relative contributions of the lens, the wafer and the reticle to the overall loss of contrast associated with non-optimized ARCs.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bruno M. La Fontaine, Adam Richard Pawloski, Alden Acheta, Yunfei Deng, Harry J. Levinson, Christopher Spence, Christian Chovino, Laurent Dieu, Eric Johnstone, and Franklin Kalk "Influence of antireflection coatings in ArF lithography", Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); https://doi.org/10.1117/12.518220
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KEYWORDS
Reticles

Semiconducting wafers

Lithography

Modulation transfer functions

Reflectivity

Spatial frequencies

Critical dimension metrology

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