ZnO homoepitaxy

Jeff Nause; Shanthi Ganesan; Bill Nemeth

doi:10.1117/12.517230

6 July 2004 ZnO homoepitaxy

Jeff Nause, Shanthi Ganesan, Bill Nemeth

Proceedings Volume 5359, Quantum Sensing and Nanophotonic Devices; (2004) https://doi.org/10.1117/12.517230
Event: Integrated Optoelectronic Devices 2004, 2004, San Jose, CA, United States

Abstract

This paper investigates the properties of homoepitaxial growth of ZnO. High quality bulk ZnO crystals have been produced by melt growth techniques in addition to ZnO thin films grown by Metalorganic Chemical Vapor Deposition (MOCVD) on bulk ZnO substrates (Zinc side and Oxygen side). The photoluminescence showed the dominance of strong and narrow band due to the band edge emissions for undoped ZnO. UV transmission showed sharp transition indication good crystal quality. High resolution x-ray diffraction measurements (HRXRD) along with rocking curve showed excellent crystal quality with full width at half maximum values close to 100 arc seconds.

Citation Download Citation

Jeff Nause, Shanthi Ganesan, and Bill Nemeth "ZnO homoepitaxy", Proc. SPIE 5359, Quantum Sensing and Nanophotonic Devices, (6 July 2004); https://doi.org/10.1117/12.517230

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