157-nm lithography with extremely high numerical aperture lens for 45-nm technology node

Toshifumi Suganaga; Jeung-Woo Lee; Eiji Kurose; Toshiyuki Ishimaru; Takamitsu Furukawa; Toshiro Itani; Kiyoshi Fujii; Julian S. Cashmore; Malcolm Gower

doi:10.1117/12.535119

28 May 2004 157-nm lithography with extremely high numerical aperture lens for 45-nm technology node

Toshifumi Suganaga, Jeung-Woo Lee, Eiji Kurose, Toshiyuki Ishimaru, Takamitsu Furukawa, Toshiro Itani, Kiyoshi Fujii, Julian S. Cashmore, Malcolm Gower

Author Affiliations +

Proceedings Volume 5377, Optical Microlithography XVII; (2004) https://doi.org/10.1117/12.535119
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

The potential for extending the numerical aperture (NA) in order to develop devices beyond the 45-nm node has been investigated using a 157-nm microstepper exposure tool at 0.90NA (third generation) and verifying the resolution limit of several different resolution enhancement techniques. It was observed that with 157-nm lithography at 0.90NA a 60-nm line and space (L/S) and a 50-nm isolated line could be formed by using an attenuated phase shifting mask (Att-PSM), and that a 50-nm L/S and a 35-nm isolated line could be formed by using an alternating phase shifting mask (Alt-PSM). The influence of the flare for the same pattern sizes was more severe for the L/S pattern rather than isolated line. However, it was the most difficult to image an isolated line with an Att-PSM, which was limited with a tolerance to the flare of less than 1%. Furthermore, the requirement of more than 0.93 for lens NA was confirmed in order to fabricate half pitch 65-nm node device with Att-PSM and half pitch 45-nm node device with Alt-PSM. Results obtained in the pattern formation of 45-nm node with an Alt-PSM confirmed that a 35-nm line could be formed down to 140-nm pitch, a 40-nm line could be formed down to 135-nm pitch, and a 45-nm line could be formed down to 100-nm pitch. It has been demonstrated that 157-nm lithography could find application to half-pitch 65-nm and 45-nm node devices.

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Toshifumi Suganaga, Jeung-Woo Lee, Eiji Kurose, Toshiyuki Ishimaru, Takamitsu Furukawa, Toshiro Itani, Kiyoshi Fujii, Julian S. Cashmore, and Malcolm Gower "157-nm lithography with extremely high numerical aperture lens for 45-nm technology node", Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); https://doi.org/10.1117/12.535119

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