Paper
30 August 2004 Characterization of InAlAs/InGaAs APD arrays for SWIR imaging applications
Joseph C. Boisvert, Andrey Masalykin, Geoffrey S. Kinsey, Takahiro Isshiki, Moran Haddad, Rengarajan Sudharsanan, Xiaoguang Zheng, Joe C. Campbell
Author Affiliations +
Abstract
40x40 element InAlAs/InGaAs APD arrays have been fabricated and characterized for performance in short wave infrared (SWIR) applications. Characterization data collected to date indicate that the arrays have >99% operability at operating gains of 10. The median un-multiplied dark current for an array element is about 170 pA, and the un-multiplied responsivity at 1550 nm is about 0.75 A/W.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Joseph C. Boisvert, Andrey Masalykin, Geoffrey S. Kinsey, Takahiro Isshiki, Moran Haddad, Rengarajan Sudharsanan, Xiaoguang Zheng, and Joe C. Campbell "Characterization of InAlAs/InGaAs APD arrays for SWIR imaging applications", Proc. SPIE 5406, Infrared Technology and Applications XXX, (30 August 2004); https://doi.org/10.1117/12.541541
Lens.org Logo
CITATIONS
Cited by 4 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Avalanche photodetectors

Chemical elements

Imaging arrays

LIDAR

Short wave infrared radiation

Staring arrays

Sensors

Back to Top