Paper
30 August 2004 New thermally isolated pixel structure for high-resolution uncooled infrared FPAs
Shigeru Tohyama, Masaru Miyoshi, Seiji Kurashina, Nobukazu Ito, Tokuhito Sasaki, Akira Ajisawa, Naoki Oda
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Abstract
This paper proposes a new thermally isolated pixel structure, having a twice-bent beam structure and eaves structure, suitable for high-resolution uncooled infrared (IR) focal-plane arrays (FPAs). It also describes the properties of test devices, fabricated to verify the effect of the new pixel structure. Although the pixel size of the test devices is 23.5 μm × 23.5 μm, which represents a smaller area by a factor of about 2.5 than the 37 μm × 37 μm pixel size for the 320 × 240 bolometer-type uncooled IRFPA, previously developed by the authors, the test devices have beams with almost the same length as in the previous IRFPA by utilizing the new beam structure. In addition, the cross-sectional area of the beam is reduced. Accordingly, the thermal conductance of the test devices can be reduced by a factor of about 2.5. The eaves structure, which is adopted to increase the fill factor of pixels, improves the responsivity by a factor of 1.3, which is consistent with our calculations. By utilizing the new thermally isolated pixel structure, the test devices with 23.5 μm pixels enable us to achieve thermal sensitivity equivalent to the previous 37 μm pixels.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shigeru Tohyama, Masaru Miyoshi, Seiji Kurashina, Nobukazu Ito, Tokuhito Sasaki, Akira Ajisawa, and Naoki Oda "New thermally isolated pixel structure for high-resolution uncooled infrared FPAs", Proc. SPIE 5406, Infrared Technology and Applications XXX, (30 August 2004); https://doi.org/10.1117/12.548145
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Cited by 15 scholarly publications.
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KEYWORDS
Infrared radiation

Thermography

Electrodes

Infrared cameras

Bolometers

Infrared imaging

Silicon

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