Direct extraction of the McWhorter's constant from LFN spectra of MOSFETs with planar layers of Si nanocrystals embedded in gate SiO2

Stéphane Ferraton; Jacques Zimmermann; Jan Chroboczek; Jean Brini; Laurent Montès; Jacek Gurgul

doi:10.1117/12.546716

25 May 2004 Direct extraction of McWhorter's constant from LFN spectra of MOSFETs with planar layers of Si nanocrystals embedded in gate SiO₂

Stéphane Ferraton, Jacques Zimmermann, Jan Chroboczek, Jean Brini, Laurent Montès, Jacek Gurgul

Author Affiliations +

Proceedings Volume 5470, Noise in Devices and Circuits II; (2004) https://doi.org/10.1117/12.546716
Event: Second International Symposium on Fluctuations and Noise, 2004, Maspalomas, Gran Canaria Island, Spain

Abstract

Low frequency noise, LFN, was studied in three sets of n-MOSFETs, with silicon nano-crystals, Si-nc's, imbedded in the gate oxide, in planar layers placed at distances t_nc=1.2, 1.5, and 2nm from the Si/SiO₂ interface. The power spectral density of the drain current, I_d, fluctuations, S_Id(f), was measured on the devices with the Si-nc's and without (reference samples). S_Id(f) measured on devices without Si-nc, was of 1/f type. The spectra in the devices with the Si-nc's, were accounted for by a superposition of a 1/f noise and a packet of Lorenzian lines, peaking at some mean frequency, f_nc, found to depend exponentially on t_nc. Such a dependence implied that the charge capture and release on the Si-nc's is governed by a direct tunnelling, with a characteristic tunnelling length, λ. From the data obtained on devices with three different positions of the Si-nc layers we could extract the value of λ, found to be equal to about 0.1nm, with a slight dependence on the applied gate voltage. The same constant is also involved in the 1/f component of LFN which is interpreted in terms of a carrier number fluctuation (McWhorter) model, where surface potential fluctuations result from the charge capture/release on traps distributed in the gate oxide. Finally, the frequency dependence of S_Id on t_nc is explained using the standard model of carrier number fluctuations, generated by trapping/release on oxide interface traps and Si-nc's.

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Stéphane Ferraton, Jacques Zimmermann, Jan Chroboczek, Jean Brini, Laurent Montès, and Jacek Gurgul "Direct extraction of McWhorter's constant from LFN spectra of MOSFETs with planar layers of Si nanocrystals embedded in gate SiO₂", Proc. SPIE 5470, Noise in Devices and Circuits II, (25 May 2004); https://doi.org/10.1117/12.546716

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