Noise in Si/SiGe and Ge/SiGe MODFET

Frederic P Aniel; Mauro Enciso Aguilar; Nicolas Zerounian; Paul Crozat; Thomas Hackbarth; Hans-Joest Herzog; Ulf König

doi:10.1117/12.546770

25 May 2004 Noise in Si/SiGe and Ge/SiGe MODFET

Frederic P Aniel, Mauro Enciso Aguilar, Nicolas Zerounian, Paul Crozat, Thomas Hackbarth, Hans-Joest Herzog, Ulf König

Proceedings Volume 5470, Noise in Devices and Circuits II; (2004) https://doi.org/10.1117/12.546770
Event: Second International Symposium on Fluctuations and Noise, 2004, Maspalomas, Gran Canaria Island, Spain

Abstract

The progress of SiGe strained layer heteroepitaxy on virtual buffer substrates has opened up the opportunities for Si-based n- and p-channel HFETs with excellent RF performance. These devices have been reached outstanding high frequency figures of merit with f_MAX of 188 GHz and 135 GHz, for the n-HFET and the p-HFET, respectively. The Si/SiGe n-HFET exhibits a minimum noise figure NF_min of 0.3 dB with associated gain G_ass of 19 dB at 2.5 GHz, while for the Ge/SiGe p-HFET a NF_min of 0.5 dB with G_ass of 14 dB at 2.5 GHz have been reached. High frequency noise properties were simulated using Pospieszalski's and PRC-Van Der Ziel's noise models. Good agreement is obtained between experimental data and modelling owing to the investigation of the main contributions to n-HFET noise properties. Furthermore, coupled with experimental results at different gate length, hydrodynamic simulations with Silvaco software have been carried out to predict further RF and noise performance improvements when shrinking the gate length down to 70 nm. The low frequency noise of SiGe FETs is reported. All the preliminary result show that the noise level and corner frequency are in the same range as in III-V HEMTs.

Citation Download Citation

Frederic P Aniel, Mauro Enciso Aguilar, Nicolas Zerounian, Paul Crozat, Thomas Hackbarth, Hans-Joest Herzog, and Ulf König "Noise in Si/SiGe and Ge/SiGe MODFET", Proc. SPIE 5470, Noise in Devices and Circuits II, (25 May 2004); https://doi.org/10.1117/12.546770

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available