Tetrabenzoporphyrin semiconductor for transistor applications

Shinji Aramaki; Yoshimasa Sakai; Ryuichi Yoshiyama; Kiyoshi Sugiyama; Noboru Ono; Jin Mizuguchi

doi:10.1117/12.566540

18 October 2004 Tetrabenzoporphyrin semiconductor for transistor applications

Shinji Aramaki, Yoshimasa Sakai, Ryuichi Yoshiyama, Kiyoshi Sugiyama, Noboru Ono, Jin Mizuguchi

Proceedings Volume 5522, Organic Field-Effect Transistors III; (2004) https://doi.org/10.1117/12.566540
Event: Optical Science and Technology, the SPIE 49th Annual Meeting, 2004, Denver, Colorado, United States

Abstract

An organic field effect transistor (FET) device based on a solution-processible tetrabenzoporphyrin (BP) has been developed. BP is derived from its precursor that is soluble in some organic solvents and gives an amorphous film of high quality by spin coating. A polycrystalline film of BP is obtained by thermal conversion of the precursor at about 200 degree C. The FET characteristics are found to largely depend on the purity, device structure, and fabrication process. The device performance was: mobility of 1.7 X 10^-2 cm²/Vs and on/off ratio of 10⁵. We have also analyzed the crystal structure of BP and characterized its electronic and morphological properties.

Citation Download Citation

Shinji Aramaki, Yoshimasa Sakai, Ryuichi Yoshiyama, Kiyoshi Sugiyama, Noboru Ono, and Jin Mizuguchi "Tetrabenzoporphyrin semiconductor for transistor applications", Proc. SPIE 5522, Organic Field-Effect Transistors III, (18 October 2004); https://doi.org/10.1117/12.566540

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