I-V modeling of current limiting mechanisms in HgCdTe FPA detectors

Angelo Scotty Gilmore; James Bangs; Amanda Gerrish

doi:10.1117/12.562614

21 October 2004 I-V modeling of current limiting mechanisms in HgCdTe FPA detectors

Angelo Scotty Gilmore, James Bangs, Amanda Gerrish

Proceedings Volume 5563, Infrared Systems and Photoelectronic Technology; (2004) https://doi.org/10.1117/12.562614
Event: Optical Science and Technology, the SPIE 49th Annual Meeting, 2004, Denver, Colorado, United States

Abstract

This paper details significant improvements in current-voltage (I-V) modeling capabilities using an automated iterative non-linear fitting program. The properties of a particular infrared (IR) detector's I-V curve are dependent upon the current limiting mechanisms in the device which depend upon the temperature, applied bias, and cutoff wavelength or detector bandgap. This model includes ideal diode diffusion, generation-recombination, band-to-band tunneling, trap-assisted tunneling, shunt resistance, and avalanche breakdown as potential current limiting mechanisms in an IR detector diode. The modeling presented herein allows one to easily distinguish, and more importantly to quantitatively compare, the amount of influence each current limiting mechanism has on various detector's I-V characteristics. Modeling of the trap-assisted-tunneling mechanism leads to an estimate of the density of occupied trap states at a given temperature. This model is now routinely applied to Raytheon Vision Systems’ test structures to better understand detector current limitations.

Citation Download Citation

Angelo Scotty Gilmore, James Bangs, and Amanda Gerrish "I-V modeling of current limiting mechanisms in HgCdTe FPA detectors", Proc. SPIE 5563, Infrared Systems and Photoelectronic Technology, (21 October 2004); https://doi.org/10.1117/12.562614

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