CD SEM metrology macro CD technology: beyond the average

Benjamin D. Bunday; Di K. Michelson; John A. Allgair; Aviram Tam; David Chase-Colin; Asaf Dajczman; Ofer Adan; Michael Har-Zvi

doi:10.1117/12.600133

10 May 2005 CD SEM metrology macro CD technology: beyond the average

Benjamin D. Bunday, Di K. Michelson, John A. Allgair, Aviram Tam, David Chase-Colin, Asaf Dajczman, Ofer Adan, Michael Har-Zvi

Author Affiliations +

Proceedings Volume 5752, Metrology, Inspection, and Process Control for Microlithography XIX; (2005) https://doi.org/10.1117/12.600133
Event: Microlithography 2005, 2005, San Jose, California, United States

Abstract

Downscaling of semiconductor fabrication technology requires an ever-tighter control of the production process. CD-SEM, being the major image-based critical dimension metrology tool, is constantly being improved in order to fulfill these requirements. One of the methods used for increasing precision is averaging over several or many (ideally identical) features, usually referred to as "Macro CD". In this paper, we show that there is much more to Macro CD technology- metrics characterizing an arbitrary array of similar features within a single SEM image-than just the average. A large amount of data is accumulated from a single scan of a SEM image, providing informative and statistically valid local process characterization. As opposed to other technologies, Macro CD not only provides extremely precise average metrics, but also allows for the reporting of full information on each of the measured features and of various statistics (such as the variability) on all currently reported CD SEM metrics. We present the mathematical background behind Macro CD technology and the opportunity for reducing number of sites for SPC, along with providing enhanced-sensitivity CD metrics.

Citation Download Citation

Benjamin D. Bunday, Di K. Michelson, John A. Allgair, Aviram Tam, David Chase-Colin, Asaf Dajczman, Ofer Adan, and Michael Har-Zvi "CD SEM metrology macro CD technology: beyond the average", Proc. SPIE 5752, Metrology, Inspection, and Process Control for Microlithography XIX, (10 May 2005); https://doi.org/10.1117/12.600133

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available