Study on p-type ZnO: a potential new source of solid state lighting

Zhi Gen Yu; Ping Wu; Hao Gong

doi:10.1117/12.617854

13 September 2005 Study on p-type ZnO: a potential new source of solid state lighting

Zhi Gen Yu, Ping Wu, Hao Gong

Proceedings Volume 5941, Fifth International Conference on Solid State Lighting; 59410E (2005) https://doi.org/10.1117/12.617854
Event: Optics and Photonics 2005, 2005, San Diego, California, United States

Abstract

Although GaN is widely applied in UV light emitting diodes (LEDs) and laser diodes (LDs) applications, its intrinsic properties may limits its potential in the development of large scale consumer products. ZnO, on the other hand, is a known potent candidate for UV-LEDs and LDs. However, it is very difficult to fabricate p-type ZnO because of a strong self-compensation effect of intrinsic defects. In this study, we shall discuss the growth conditions that favor p-type ZnO based on first principles density functional theory (DFT) calculations. Selection of doping source and the corresponding thin film fabrication techniques and experimental results will be discussed also.

Citation Download Citation

Zhi Gen Yu, Ping Wu, and Hao Gong "Study on p-type ZnO: a potential new source of solid state lighting", Proc. SPIE 5941, Fifth International Conference on Solid State Lighting, 59410E (13 September 2005); https://doi.org/10.1117/12.617854

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