Electro-ridge for large injection current of micro-size InGaN light emitting diode

B. J. Pong; C. H. Chen; J. F. Hsu; C. J. Tun; G. C. Chi

doi:10.1117/12.613306

13 September 2005 Electro-ridge for large injection current of micro-size InGaN light emitting diode

B. J. Pong, C. H. Chen, J. F. Hsu, C. J. Tun, G. C. Chi

Proceedings Volume 5941, Fifth International Conference on Solid State Lighting; 59410Y (2005) https://doi.org/10.1117/12.613306
Event: Optics and Photonics 2005, 2005, San Diego, California, United States

Abstract

High-performance, blue micro-size InGaN light emitting diodes (LEDs) with diameters of 3 to 20 μm have been fabricated. An ion implantation technique and a 12 micron electro-ridge were used to simplify fabrication processes. The 3 to 20μm LEDs that exhibited a large emission photon blue shift (87.5meV ~52.9meV) were observed in electro-luminescence (EL) spectra. Under an increased injection current, the quantum wells become populated with charge carriers, which screened the internal piezoelectric field and caused the energy blue shift of EL eventually. A high injection current caused a high junction temperature that narrowed the band gap (red shift). The size dependent energy shift is largely owing to the competition between the blue and the red shifts. At a bias voltage of 8.96V (which is 140% of the turn on voltage, 6.4V), the 10 μm device exhibited an injection current of 7.9mA. This value exceeds that in literature, i.e., 4mA at a bias voltage of 14V (which is 140% of the turn on voltage, 10V). This phenomenon may be owing to that the ion implantation and electro-ridge designs herein involved a lower series resistance. The external quantum efficiencies (E.Q.E.) of the micro size LEDs herein were all 0.4%~3.3%, which is better than the values reported in literature, which were ranged between 0.004% and 1.29% for an individual LED and an array LED, respectively. The E.Q.E. of the 15μm device at maximum injection current had the optimum value yet obtained for micro-size LEDs. The dependence of the blue shift and the E.Q.E. on the size warrants further study.

Citation Download Citation

B. J. Pong, C. H. Chen, J. F. Hsu, C. J. Tun, and G. C. Chi "Electro-ridge for large injection current of micro-size InGaN light emitting diode", Proc. SPIE 5941, Fifth International Conference on Solid State Lighting, 59410Y (13 September 2005); https://doi.org/10.1117/12.613306

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
8 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Light emitting diodes

Ion implantation

Quantum wells

Electroluminescence

External quantum efficiency

Indium gallium nitride

Gallium nitride

Show All Keywords

Keywords/Phrases

Search In:

Publication Years