Mask tilt effects counteracted by wafer tilts in a Schwarzschild objective based EUV lithography setup

S. Bollanti; P. Di Lazzaro; F. Flora; L. Mezi; D. Murra; A. Torre

doi:10.1117/12.624845

14 October 2005 Mask tilt effects counteracted by wafer tilts in a Schwarzschild objective based EUV lithography setup

S. Bollanti, P. Di Lazzaro, F. Flora, L. Mezi, D. Murra, A. Torre

Proceedings Volume 5962, Optical Design and Engineering II; 59622Y (2005) https://doi.org/10.1117/12.624845
Event: Optical Systems Design 2005, 2005, Jena, Germany

Abstract

The results of a numerical simulation of a conventional and a modified Schwarzschild objective are illustrated in relation with their use as imaging systems in an extreme ultraviolet lithography setup. It is demonstrated that the degradation of the resolution on the wafer due to the unavoidable tilt of the mask to the axis can fairly be vanished by a counter tilt of the wafer. In particular, it has been analysed the Schwarzschild objective setup under implementation at the ENEA Frascati Center within the context of the Italian FIRB project for EUV lithography.

Citation Download Citation

S. Bollanti, P. Di Lazzaro, F. Flora, L. Mezi, D. Murra, and A. Torre "Mask tilt effects counteracted by wafer tilts in a Schwarzschild objective based EUV lithography setup", Proc. SPIE 5962, Optical Design and Engineering II, 59622Y (14 October 2005); https://doi.org/10.1117/12.624845

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