High-power diode lasers with an aluminium-free active region at 915 nm

N. Michel; I. Hassiaoui; M. Calligaro; M. Lecomte; O. Parillaud; M. Krakowski; L. Borruel; J.-M. García-Tijero; I. Esquivias; S. Sukecki; E. C. Larkins

doi:10.1117/12.630738

3 November 2005 High-power diode lasers with an aluminium-free active region at 915 nm

N. Michel, I. Hassiaoui, M. Calligaro, M. Lecomte, O. Parillaud, M. Krakowski, L. Borruel, J.-M. García-Tijero, I. Esquivias, S. Sukecki, E. C. Larkins

Author Affiliations +

Proceedings Volume 5989, Technologies for Optical Countermeasures II; Femtosecond Phenomena II; and Passive Millimetre-Wave and Terahertz Imaging II; 598909 (2005) https://doi.org/10.1117/12.630738
Event: European Symposium on Optics and Photonics for Defence and Security, 2005, Bruges, Belgium

Abstract

We have developed high-power lasers, which are based on an Al-free active region at 915 nm. The laser structure has very low internal losses of 0.5 cm^-1, a very low transparency current density of 86 A/cm², and a high internal quantum efficiency of 86%. Based on these good results, we have realised narrow-aperture, index-guided tapered lasers which deliver 1 W CW with and M² beam quality factor of 3.0 using both the 1/e² and standard-deviation methods. We have also fabricated index-guided tapered lasers with a Clarinet shape, which deliver 0.65 W CW with an M² beam quality factor of less than 1.5 at 1/e², and less than 2.5 using the standard deviation method.

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N. Michel, I. Hassiaoui, M. Calligaro, M. Lecomte, O. Parillaud, M. Krakowski, L. Borruel, J.-M. García-Tijero, I. Esquivias, S. Sukecki, and E. C. Larkins "High-power diode lasers with an aluminium-free active region at 915 nm", Proc. SPIE 5989, Technologies for Optical Countermeasures II; Femtosecond Phenomena II; and Passive Millimetre-Wave and Terahertz Imaging II, 598909 (3 November 2005); https://doi.org/10.1117/12.630738

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