InP-based vertical cavity surface emitting lasers for 10G applications

N. Nishiyama; C. Caneau; C. E. Zah

doi:10.1117/12.638988

23 November 2005 InP-based vertical cavity surface emitting lasers for 10G applications

N. Nishiyama, C. Caneau, C. E. Zah

Proceedings Volume 6020, Optoelectronic Materials and Devices for Optical Communications; 602001 (2005) https://doi.org/10.1117/12.638988
Event: Asia-Pacific Optical Communications, 2005, Shanghai, China

Abstract

InP-based vertical cavity surface emitting lasers (VCSELs) with AlGaInAs QWs and AlGaInAs/InP DBR have been demonstrated. Over 2 mW and 0.8 mW single-mode powers at 1.3 μm have been achieved at 25 °C and 85 °C, respectively. A high eye-diagram margin at 10 Gbit/s modulation was demonstrated using 13 GHz maximum relaxation oscillation frequency VCSELs. This high relaxation oscillation frequency enables the achievement, without optical isolator, of error-free transmission under 10 Gbit/s modulation with high optical reflection. To achieve stable polarization operation, 1.3 μm VCSELs on InP(311)A substrate have been realized and showed very stable polarization behavior.

Citation Download Citation

N. Nishiyama, C. Caneau, and C. E. Zah "InP-based vertical cavity surface emitting lasers for 10G applications", Proc. SPIE 6020, Optoelectronic Materials and Devices for Optical Communications, 602001 (23 November 2005); https://doi.org/10.1117/12.638988

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