Nitrogen ion implantation and characterization of tungsten oxide films

T. Tesfamichael; J. M. Bell

doi:10.1117/12.640054

3 January 2006 Nitrogen ion implantation and characterization of tungsten oxide films

T. Tesfamichael, J. M. Bell

Proceedings Volume 6037, Device and Process Technologies for Microelectronics, MEMS, and Photonics IV; 60371L (2006) https://doi.org/10.1117/12.640054
Event: Microelectronics, MEMS, and Nanotechnology, 2005, Brisbane, Australia

Abstract

This paper implements modification of tungsten oxide film using ion implantation and a physical characterization of the film. The film was implanted with nitrogen at energies between 10 keV and 40 keV and ion dose range 10¹⁴−10¹⁶ cm^-2. The surface morphology of the film after implantation has been modified as observed using electron microscopy. The transmittance of the film was found to decrease with increasing implantation energy and ion dose as measured using conventional spectrophotometer. Depth profile of nitrogen was analyzed using Secondary Ion Mass Spectroscopy (SIMS) and found a peak of nitrogen across the depth of the implanted layer. The amount of nitrogen was found to increase with increasing ion dose and energy. From electron diffraction a broader diffraction rings were revealed from both the implanted and un-implanted layers, indicating that the crystalline properties of the tungsten oxide film after ion implantation remains the same.

Citation Download Citation

T. Tesfamichael and J. M. Bell "Nitrogen ion implantation and characterization of tungsten oxide films", Proc. SPIE 6037, Device and Process Technologies for Microelectronics, MEMS, and Photonics IV, 60371L (3 January 2006); https://doi.org/10.1117/12.640054

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