Vertical-cavity laser based on interband-tunneling staggered-bandgap heterostructure

Boris Gelmont; Dwight Woolard; Tatiana Globus

doi:10.1117/12.646882

10 February 2006 Vertical-cavity laser based on interband-tunneling staggered-bandgap heterostructure

Boris Gelmont, Dwight Woolard, Tatiana Globus

Proceedings Volume 6132, Vertical-Cavity Surface-Emitting Lasers X; 61320E (2006) https://doi.org/10.1117/12.646882
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

A new concept is presented for realizing midwave-infrared vertical- cavity lasers based on an interband-resonant-tunneling-diode (I-RTD). Model equations are derived in terms of material and structure parameters for predicting the output power in an I-RTD laser device constructed of InAs/AlGaSb layers. Simulation made for midwave- infrared lasers suggest that the radiation output density power in this I-RTD laser can be achieved of the order of 40 W/cm².

Citation Download Citation

Boris Gelmont, Dwight Woolard, and Tatiana Globus "Vertical-cavity laser based on interband-tunneling staggered-bandgap heterostructure", Proc. SPIE 6132, Vertical-Cavity Surface-Emitting Lasers X, 61320E (10 February 2006); https://doi.org/10.1117/12.646882

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