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In this study, the four different types of ArF and KrF OBARC have been evaluated to know the implantation blocking and gap fill performance for 80nm node device application. The boron implantation conditions of 11B and 49BF2 are processed and the minimum energy for implantation blocking of these OBARC are obtained by SIMS analysis. The minimum energy of ArF and KrF OBARC are about 13.0KeV and 15.0KeV, respectively. The chemical density of each OBARC is also calculated from the minimum blocking energy. Their values of ArF and KrF OBARC are about 0.8g/cm3 and 1.0g/cm3, respectively. The minimum energy trends among the tested materials show the almost similar results with those of chemical density as expected. Even though the OBARC are composed of the similar chemical structure, they induce the different chemical density because of their own molecular weight and other additional structure as like chromophore. Both of KrF and ArF OBARC show the good gap fill performance on 0.2μm size of via substrate and real topology pattern without void. It seems that the gap fill property is not much affected by the chemical structure or molecular weight of OBARC. It is thought that OBARC is an effective material for gap fill application than other resists, especially for deep topology patterns. In general, the etch rate of OBARC is slightly faster than that of ArF resist or similar with that in this experimental condition. The OBARC having high chemical density shows the slower etch rate and that of OBARC is inversely proportional to the chemical density of it. Therefore, it is confirmed that the OBARC is able to apply for implantation blocking purpose without gap fill void in real device below 80nm, since they have the good characteristics for gap fill, reflectivity control from substrate and implantation blocking property at a certain coating thickness.
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