Improved breakdown model for estimating dark count rate in avalanche photodiodes with InP and InAlAs multiplication layers

Andrew S. Huntington; Madison A. Compton; George M. Williams

doi:10.1117/12.668659

19 May 2006 Improved breakdown model for estimating dark count rate in avalanche photodiodes with InP and InAlAs multiplication layers

Andrew S. Huntington, Madison A. Compton, George M. Williams

Author Affiliations +

Proceedings Volume 6214, Laser Radar Technology and Applications XI; 62140R (2006) https://doi.org/10.1117/12.668659
Event: Defense and Security Symposium, 2006, Orlando (Kissimmee), Florida, United States

Abstract

We present an improved method for estimating the dark count rate of single-photon-sensitive avalanche photodiodes (SPADs) with either InP or InAlAs multiplication layers. Our simulation of junction breakdown probability can easily accommodate arbitrary electric field profiles and APD bias conditions. In combination with local models of dark carrier generation, our technique can provide more realistic estimates of dark count rate than are obtained by multiplying the primary dark current by a single junction breakdown probability, or by assuming constant electric fields in the multiplication layer. Our method can assist in the design of SPADs for demanding laser radar applications.

Citation Download Citation

Andrew S. Huntington, Madison A. Compton, and George M. Williams "Improved breakdown model for estimating dark count rate in avalanche photodiodes with InP and InAlAs multiplication layers", Proc. SPIE 6214, Laser Radar Technology and Applications XI, 62140R (19 May 2006); https://doi.org/10.1117/12.668659

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