S-Ku band intelligent amplifier microsystem

Katherine J. Herrick; George Jerinic; Robert P. Molfino; Steven M. Lardizabal; Brandon Pillans

doi:10.1117/12.669718

18 May 2006 S-Ku band intelligent amplifier microsystem

Katherine J. Herrick, George Jerinic, Robert P. Molfino, Steven M. Lardizabal, Brandon Pillans

Proceedings Volume 6232, Intelligent Integrated Microsystems; 62320W (2006) https://doi.org/10.1117/12.669718
Event: Defense and Security Symposium, 2006, Orlando (Kissimmee), Florida, United States

Abstract

Progress-to-date of a S-Ku band intelligent amplifier microsystem is presented. Performance objectives are 0.5 Watt with 30%-55% power added efficiency across the band using a total of 10 RF MEMS. GaAs-to-GaAs and Borosilicate-to-GaAs low temperature (<250C) indium-gold wafer bonding is employed to provide hermeticity and integration of the pHEMT transistor with the RF MEMS. The compact mixed signal microsystem, 2 inches by 3 inches, utilizes an existing data processor with an intelligent control algorithm which optimizes the input and output circuit matching networks for optimal performance.

Citation Download Citation

Katherine J. Herrick, George Jerinic, Robert P. Molfino, Steven M. Lardizabal, and Brandon Pillans "S-Ku band intelligent amplifier microsystem", Proc. SPIE 6232, Intelligent Integrated Microsystems, 62320W (18 May 2006); https://doi.org/10.1117/12.669718

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