Investigations of bipolar magnetotransistor

R. D. Tikhonov

doi:10.1117/12.683491

10 June 2006 Investigations of bipolar magnetotransistor

R. D. Tikhonov

Proceedings Volume 6260, Micro- and Nanoelectronics 2005; 62601G (2006) https://doi.org/10.1117/12.683491
Event: Micro- and Nanoelectronics 2005, 2005, Zvenigorod, Russian Federation

Abstract

(BMT) with well. Investigation by the modem two-dimensional TCAD of the volume SRH-recombination are studied of the lateral bipolar magnetotransistor with the diffusion well for the physicists of working and high sensitivity designs. Magnetic field effect create volume concentration-recombination mechanism of the current negative sensitivity. For raising sensitivity is conduct study of series lateral bipolar magnetotransistor with base in well. Joining the contacts of base and well creates a threshold of operating, negative magnetosensitivity, growing of sensitivity in weak magnetic field. Transistor can serve the generator electron-hole plasma. Device has volumetric generation-recombination mechanism of sensitivity, new principle of getting maximum relative sensitivity on the current 2000 1/T in the magnetic field of the Earth.

Citation Download Citation

R. D. Tikhonov "Investigations of bipolar magnetotransistor", Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 62601G (10 June 2006); https://doi.org/10.1117/12.683491

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