Paper
7 June 2006 A decrease in the damage threshold in dielectric materials induced by negatively chirped laser pulses
E. H. Louzon, Y. Ehrlich, M. Fraenkel, D. Fisher, S. Pecker, Z. Henis, A. Zigler
Author Affiliations +
Abstract
The threshold fluence for laser induced damage in wide band gap dielectric materials, such as fused silica and MgF2, is observed to be lower by up to 20% for negatively (down) chirped pulses than for positively (up) chirped, at pulse durations ranging from 60 fs to 1 ps. This behavior of the threshold fluence for damage on the chirp direction was not observed in semiconductors, such as silicon and GaAs. Based on a model describing electron generation in the conduction band and Joule heating, it is suggested that the decrease in the damage threshold for negatively chirped pulse is related to the role of multiphoton ionization in wide gap materials.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
E. H. Louzon, Y. Ehrlich, M. Fraenkel, D. Fisher, S. Pecker, Z. Henis, and A. Zigler "A decrease in the damage threshold in dielectric materials induced by negatively chirped laser pulses", Proc. SPIE 6261, High-Power Laser Ablation VI, 62612W (7 June 2006); https://doi.org/10.1117/12.667787
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KEYWORDS
Ionization

Laser damage threshold

Dielectrics

Silicon

Gallium arsenide

Pulsed laser operation

Picosecond phenomena

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