Bias-dependent charge accumulation in pentacene-based thin-film transistors

Chi-Feng Lin; Kai-Hsiang Chuang; Yet-Min Chen; Jiun-Haw Lee; Jian-Jang Huang; Yu-Wu Wang

doi:10.1117/12.678972

25 August 2006 Bias-dependent charge accumulation in pentacene-based thin-film transistors

Chi-Feng Lin, Kai-Hsiang Chuang, Yet-Min Chen, Jiun-Haw Lee, Jian-Jang Huang, Yu-Wu Wang

Proceedings Volume 6336, Organic Field-Effect Transistors V; 63361F (2006) https://doi.org/10.1117/12.678972
Event: SPIE Optics + Photonics, 2006, San Diego, California, United States

Abstract

In this paper, we have demonstrated the current increase with repeated measurements of I_d-V_ds curves with different V_g values which results from the non-uniform carrier accumulation in the channel region of a pentacene-based thin film transistor (TFT). The mobility of our device reaches 0.07 cm²/Vs even the substrate was not heated during pentacene deposition. Besides, the devices show good air-stable properties. The magnitude of I_d decreased less than 30% after exposure in air for 2 weeks. By repeating the I_d-V_ds measurements from 0 to -50 V with the V_g values of 0, -10, -20, -30, -40, and -50 V for 10 minutes, we observed a four times current increase from -0.75 to -2.8 μA at V_g = -50V and V_ds = -50V. The current increase comes from the holes accumulation near the drain. When the source and drain were exchanged, the current decreases to the 0.08 μA. After another 10 minutes operation, the current will recover back to the original values. Such a process is reversible and shows the potential of the memory device base on this pentacene transistor.

Citation Download Citation

Chi-Feng Lin, Kai-Hsiang Chuang, Yet-Min Chen, Jiun-Haw Lee, Jian-Jang Huang, and Yu-Wu Wang "Bias-dependent charge accumulation in pentacene-based thin-film transistors", Proc. SPIE 6336, Organic Field-Effect Transistors V, 63361F (25 August 2006); https://doi.org/10.1117/12.678972

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