Paper
19 October 2006 A nanotube-on-insulator (NOI) approach toward scalable and integratable nanotube devices on sapphire
Chongwu Zhou, Xiaolei Liu, Song Han, Koungmin Ryu, Bo Lei, Alexander Badmaev, Jayakanth Ravichandran, Lei Dong
Author Affiliations +
Abstract
We present a novel nanotube-on-insulator (NOI) approach to produce high-yield nanotube devices based on aligned single-walled carbon nanotubes. First, we managed to grow aligned nanotube arrays with controlled density on crystalline, insulating sapphire substrates, which bear analogy to industry-adopted silicon-on-insulator substrates. Based on the nanotube arrays, we demonstrated registration-free fabrication of both top-gated and polymer-electrolyte-gated field-effect transistors with minimized parasitic capacitance. In addition, we have successfully developed a way to transfer these aligned nanotube arrays to flexible substrates. Our approach has great potential for high-density, largescale integrated systems based on carbon nanotubes for both micro- and flexible electronics.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chongwu Zhou, Xiaolei Liu, Song Han, Koungmin Ryu, Bo Lei, Alexander Badmaev, Jayakanth Ravichandran, and Lei Dong "A nanotube-on-insulator (NOI) approach toward scalable and integratable nanotube devices on sapphire", Proc. SPIE 6370, Nanomaterial Synthesis and Integration for Sensors, Electronics, Photonics, and Electro-Optics, 637002 (19 October 2006); https://doi.org/10.1117/12.690572
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KEYWORDS
Electrodes

Transistors

Sapphire

Silicon

Capacitance

Carbon nanotubes

Polymers

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