Paper
5 October 2006 Diode laser bars deliver > 400-W peak CW power from 800-nm to 980-nm enabling wide range of applications
Paul Crump, Steve Patterson, Jun Wang, Weimin Dong, Mike Grimshaw, Shiguo Zhang, Sandrio Elim, Mike Bougher, Jason Patterson, Suhit Das, Damian Wise, Mark DeFranza, Jake Bell, Jason Farmer, Mark De Vito, Rob Martinsen
Author Affiliations +
Proceedings Volume 6397, Technologies for Optical Countermeasures III; 639706 (2006) https://doi.org/10.1117/12.689842
Event: Optics/Photonics in Security and Defence, 2006, Stockholm, Sweden
Abstract
Peak optical power from single 1-cm diode laser bars is advancing rapidly across all commercial wavelengths. Progress to date has allowed us to demonstrate > 400-W peak output from single 1-cm diode laser bars at emission wavelengths from 800-nm to 980-nm. The available range of emission wavelengths has also been increased, with 90-W bars shown at 660-nm, 37W at 1910-nm and 25W at 2070-nm, complementing the 100-W bar previously demonstrated at 1470-nm. Peak power is seen to correlate closely peak power conversion efficiency. Further advances in diode laser efficiency and low thermal resistance packaging technology continue to drive these powers higher. The most critical improvements have been the reduction in the diode laser operating voltage through optimization of hetero-barriers (leading to 74% efficient 100-W bars on micro-channel at 975-nm) and a reduction in packaging thermal resistance by optimizing microchannel performance (leading to < 0.2-°C/W thermal resistance). We have also recently extended our high efficiency designs to shorter wavelengths, now delivering over 70% efficiency at 790-nm. Ever-increasing power levels (projected to eventually exceed 1-kW per bar) reduce the cost in Euro per W of diode laser systems, enabling broader application in military, industrial and medical markets. In addition, increasing availability of high powers at new wavelengths is enabling many new applications.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Paul Crump, Steve Patterson, Jun Wang, Weimin Dong, Mike Grimshaw, Shiguo Zhang, Sandrio Elim, Mike Bougher, Jason Patterson, Suhit Das, Damian Wise, Mark DeFranza, Jake Bell, Jason Farmer, Mark De Vito, and Rob Martinsen "Diode laser bars deliver > 400-W peak CW power from 800-nm to 980-nm enabling wide range of applications", Proc. SPIE 6397, Technologies for Optical Countermeasures III, 639706 (5 October 2006); https://doi.org/10.1117/12.689842
Lens.org Logo
CITATIONS
Cited by 5 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Semiconductor lasers

High power lasers

Resistance

Crystals

Laser crystals

Solid state lasers

Indium

RELATED CONTENT


Back to Top