Paper
20 December 2006 Pattern transfer over extreme topographies using a SU-8 leveling process
Frederik Ceyssens, Robert Puers
Author Affiliations +
Proceedings Volume 6415, Micro- and Nanotechnology: Materials, Processes, Packaging, and Systems III; 64151G (2006) https://doi.org/10.1117/12.695843
Event: SPIE Smart Materials, Nano- and Micro-Smart Systems, 2006, Adelaide, Australia
Abstract
In micromachining, there is a growing interest in pattern transfer over extreme topographies. The ability to pattern a sputtered layer on the bottom of an etched recess, tens to hundreds of micrometers deep or to make an electrical connection from the bottom to the top of such a recess improves the manufacturing abilities of any micromachining facility significantly. The procedure developed in this work is suitable for such purposes, can be implemented with completely standard micromachining equipment and works on any surface. It relies on the ultra-thick high aspect ratio resist SU-8 to fill up deep pits completely, using a modified spin coating procedure. A process is demonstrated that allows 20 um wide metal connections from the bottom to the top of a 250 um isotropically etched pit to be made. The process is compared with existing alternatives.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Frederik Ceyssens and Robert Puers "Pattern transfer over extreme topographies using a SU-8 leveling process", Proc. SPIE 6415, Micro- and Nanotechnology: Materials, Processes, Packaging, and Systems III, 64151G (20 December 2006); https://doi.org/10.1117/12.695843
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KEYWORDS
Coating

Photoresist materials

Semiconducting wafers

Micromachining

Etching

Photoresist processing

Chromium

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