Paper
6 February 2007 Comparison of the simulation and experiments of the nitride-based UV light emitting diodes
K. Iida, H. Watanabe, K. Takeda, T. Nagai, T. Sumii, K. Nagamatsu, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, A. Bandoh
Author Affiliations +
Abstract
In attempt to prepare a high performance AlxGa1-xN based UV-B LED, a computer simulation has been performed on a typical UV-LED structure to find out the effect of threading dislocations on non-radiative recombination process. UVB LED structures were formed on using GaN and AlN based layers for comparison. Cracks were generated in the device structure formed on GaN underlayer. No cracks were observed on the device structure formed on AlN under layer. Much better structure was formed when the base AlN was grown by high temperature MOVPE.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. Iida, H. Watanabe, K. Takeda, T. Nagai, T. Sumii, K. Nagamatsu, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, and A. Bandoh "Comparison of the simulation and experiments of the nitride-based UV light emitting diodes", Proc. SPIE 6468, Physics and Simulation of Optoelectronic Devices XV, 64680R (6 February 2007); https://doi.org/10.1117/12.717174
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Cited by 2 scholarly publications.
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KEYWORDS
Gallium

Aluminum nitride

Aluminum

Gallium nitride

Epitaxial lateral overgrowth

Light emitting diodes

Ultraviolet light emitting diodes

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