Paper
22 March 2007 Investigation of photodetector structures for THz emission by photomixing using numerical simulation
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Abstract
The operation and performance of an InGaAs/InP uni-travelling-carrier photodiode (UTC-PD) has been studied using a commercial device simulator. We compare the UTC-PD with conventional PIN photodiodes, focusing particularly on evaluating the intrinsic device performance.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Angela Dyson, Ian D. Henning, and Michael J. Adams "Investigation of photodetector structures for THz emission by photomixing using numerical simulation", Proc. SPIE 6468, Physics and Simulation of Optoelectronic Devices XV, 64681Q (22 March 2007); https://doi.org/10.1117/12.717250
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KEYWORDS
Doping

Terahertz radiation

Numerical simulations

Diffusion

Indium gallium arsenide

Photodetectors

Fourier transforms

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