Paper
11 June 2007 Performance limits of simulation models for noise characterization of mm-wave devices
Author Affiliations +
Proceedings Volume 6600, Noise and Fluctuations in Circuits, Devices, and Materials; 66001R (2007) https://doi.org/10.1117/12.725093
Event: SPIE Fourth International Symposium on Fluctuations and Noise, 2007, Florence, Italy
Abstract
Based on Boltzmann transport equation, the drift-diffusion, hydrodynamic, and Monte-Carlo physical models are accurately developed. The model equations are self-consistently solved with Poisson equation, and with Schrödinger equation when quantization effects take place, in one and two-dimensions to characterize the operation and optimize the structure of mm-wave devices. The effects of the devices dimensions, biasing conditions and operating frequencies on the accuracy of the obtained model (simulator) results are thoroughly investigated. Based on physical understanding of the models, the simulation results are analyzed and conclusions are drawn to fully determine the limits at which a certain device simulator can be accurately and efficiently used to characterize the noise behaviour of mm-wave devices.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ali Abou-Elnour "Performance limits of simulation models for noise characterization of mm-wave devices", Proc. SPIE 6600, Noise and Fluctuations in Circuits, Devices, and Materials, 66001R (11 June 2007); https://doi.org/10.1117/12.725093
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KEYWORDS
Instrument modeling

Monte Carlo methods

Electrons

Semiconductors

Performance modeling

Scattering

Field effect transistors

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