Calculation of photosensitivity of porous silicon for optoelectronic devices

Liubomyr S. Monastyrskii; Bogdan S. Sokolovskii

doi:10.1117/12.742527

26 April 2007 Calculation of photosensitivity of porous silicon for optoelectronic devices

Liubomyr S. Monastyrskii, Bogdan S. Sokolovskii

Proceedings Volume 6636, 19th International Conference on Photoelectronics and Night Vision Devices; 66360T (2007) https://doi.org/10.1117/12.742527
Event: 19th International Conference on Photoelectronics and Night Vision Devices, 2006, Moscow, Russian Federation

Abstract

It has been developed a new theoretical model for the photosensitivity of porous silicon which takes into account the recombination of photocarriers at the surfaces of spherical pores. An expression for the semiconductor photoconductivity has been derived under assumption of uniform generation of photocarriers and diffusion character of their movement. The photosensitivity of porous silicon has been shown to strongly depend on the velocity of photocarriers recombination at the pore's surfaces, radius of pores and average distance between pores.

Citation Download Citation

Liubomyr S. Monastyrskii and Bogdan S. Sokolovskii "Calculation of photosensitivity of porous silicon for optoelectronic devices", Proc. SPIE 6636, 19th International Conference on Photoelectronics and Night Vision Devices, 66360T (26 April 2007); https://doi.org/10.1117/12.742527

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