Paper
19 November 2007 Luminescence properties of Cu and Cu,Al doped ZnS quantum dots
Xiaosong Zhang, Lan Li, Xiaoyi Dong, Guiyun Kai, Dongqing Dong, Yanfang Zhang, Jiangyong Li
Author Affiliations +
Proceedings Volume 6782, Optoelectronic Materials and Devices II; 67822I (2007) https://doi.org/10.1117/12.745742
Event: Asia-Pacific Optical Communications, 2007, Wuhan, China
Abstract
Free-standing ZnS:Cu and ZnS:Cu,Al quantum dots were prepared in the aqueous medium from readily available precursors. The construction, morphology and luminescence properties of the ZnS:Cu and ZnS:Cu,Al quantum dots were evaluated by XRD,TEM and photoluminescence spectra. The average particle size was calculated using the Scherrer formula to be 5nm, which is also observed from HRTEM image. In PL spectra, 0.7% Cu and 0.4% Cu -doped ZnS:Cu quantum dots have emission peak around 470 nm and 500 nm, which attributed to the transition from the shallow donor level (sulfur vacancy) to the e level and t2 level of Cu2+ respectively. And PL spectra of ZnS:Cu,Al quantum dots is similar with the PL of ZnS:Cu quantum dots, but the luminescence intensity of quantum dots ZnS:Cu,Al increase, which arise from that Al 3+ ions as co-activated enhance donor level.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xiaosong Zhang, Lan Li, Xiaoyi Dong, Guiyun Kai, Dongqing Dong, Yanfang Zhang, and Jiangyong Li "Luminescence properties of Cu and Cu,Al doped ZnS quantum dots", Proc. SPIE 6782, Optoelectronic Materials and Devices II, 67822I (19 November 2007); https://doi.org/10.1117/12.745742
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KEYWORDS
Quantum dots

Copper

Ions

Luminescence

Aluminum

Zinc

Crystals

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