Effect of ion damage on optical properties of ZnO films grown by plasma-assisted MBE

V. Avrutin; M. A. Reshchikov; J. Nie; N. Izyumskaya; R. Shimada; Ü. Özgür; J. V. Foreman; H. O. Everitt; C. Litton; H. Morkoç

doi:10.1117/12.764132

15 February 2008 Effect of ion damage on optical properties of ZnO films grown by plasma-assisted MBE

V. Avrutin, M. A. Reshchikov, J. Nie, N. Izyumskaya, R. Shimada, Ü. Özgür, J. V. Foreman, H. O. Everitt, C. Litton, H. Morkoç

Author Affiliations +

Proceedings Volume 6895, Zinc Oxide Materials and Devices III; 68950Y (2008) https://doi.org/10.1117/12.764132
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

The effect of plasma-induced ion damage on the optical properties of ZnO films grown by plasma-assisted molecular beam epitaxy on a-sapphire substrates and GaN(0001)/c-sapphire templates prepared has been studied using steady-state and time-resolved photoluminescence. We observed that the deflecting the ions produced by the RF oxygen plasma away from substrate results in improved excitonic emission and modification of the defect-related PL spectrum. The intensity of the near-band-edge lines in the photoluminescence spectra from the layers grown with the ion deflection was found to increase by factors 7 to 20 for the layers grown on GaN(0001)/c-sapphire at a plasma power of 350 W and by 3 to 4 times for ZnO grown on a-sapphire substrates at a plasma power of 265 W as compared to the controls grown without the ion deflection. The yellow-green spectral range was dominated by different defect bands in the films grown with and without ion deflection. The effect of RF power on peak positions of the defect band was studied for the films grown without ion deflection. For the ZnO films grown on a-plane sapphire substrates, time-resolved photoluminescence showed a significant increase in luminescence decay times both at RT and 89 K. However, for ZnO on GaN(0001)/csapphire substrates, virtually no improvement in decay time was found at 89 K with only a moderate increase in decay constant at room temperature.

Citation Download Citation

V. Avrutin, M. A. Reshchikov, J. Nie, N. Izyumskaya, R. Shimada, Ü. Özgür, J. V. Foreman, H. O. Everitt, C. Litton, and H. Morkoç "Effect of ion damage on optical properties of ZnO films grown by plasma-assisted MBE", Proc. SPIE 6895, Zinc Oxide Materials and Devices III, 68950Y (15 February 2008); https://doi.org/10.1117/12.764132

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available