Accurate device simulations through CD-SEM-based edge-contour extraction

Eitan Shauly; Ovadya Menadeva; Rami Drori; Moran Cohen-Yasour; Israel Rotstein; Ram Peltinov; Avishai Bartov; Sergei Latinski; Amit Siany; Mark Geshesl

doi:10.1117/12.772648

4 April 2008 Accurate device simulations through CD-SEM-based edge-contour extraction

Eitan Shauly, Ovadya Menadeva, Rami Drori, Moran Cohen-Yasour, Israel Rotstein, Ram Peltinov, Avishai Bartov, Sergei Latinski, Amit Siany, Mark Geshesl

Author Affiliations +

Proceedings Volume 6922, Metrology, Inspection, and Process Control for Microlithography XXII; 69221L (2008) https://doi.org/10.1117/12.772648
Event: SPIE Advanced Lithography, 2008, San Jose, California, United States

Abstract

A new methodology to predict changes in device performances due to systematic lithography and etch effects is described in this paper. Our methodology consists on Automatic Edge-Contour-Extraction (ECE) on Poly Over Active Layer, taking along the manufacturing variability. In general, the AMAT SEM (Scanning Electron Microscopy) ECE algorithm is based on CAD (GDS) to SEM pattern recognition, followed by CD based 2D edge extraction. Device modeling (using SPICE simulation) is used, to predict the nominal values as well as the device performances variability of the transistors drive current (Ion) and leakage current (Ioff). We used our method to compare a classical (simple rectangular) transistors and "U-Shape AA" transistors, both manufactured using Tower TS013LL (0.13um Low-Leakage) Platform. It was found, as predicted, that U-shape transistors have larger W distribution. However, "U-shape" also showed much tighter L distribution and the overall Ion spread is lower comparing to classical transistors. Also, U-Shape transistors found to have lower Lstdev (gate length distribution of each individual transistor). We also used the ECE methodology, to compare transistors of single side dog-bone to double-side dog-bone. Based on our work, we can predict that single-side dog-bone transistors, will have higher and larger Ioff distributions, and the overall Ioff speared along the wafer, will go up to a factor of x2.5.

Citation Download Citation

Eitan Shauly, Ovadya Menadeva, Rami Drori, Moran Cohen-Yasour, Israel Rotstein, Ram Peltinov, Avishai Bartov, Sergei Latinski, Amit Siany, and Mark Geshesl "Accurate device simulations through CD-SEM-based edge-contour extraction", Proc. SPIE 6922, Metrology, Inspection, and Process Control for Microlithography XXII, 69221L (4 April 2008); https://doi.org/10.1117/12.772648

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