Paper
11 March 2008 Wurtzite structure high Mg content ZnMgO thin films deposited by oxygen-plasma enhanced pulsed laser deposition
Yanfei Gu, Xiaomin Li, J. F. Kong, C. Yang, W. Z. Shen, Y. W. Zhang, W. D. Yu, X. D. Gao
Author Affiliations +
Proceedings Volume 6984, Sixth International Conference on Thin Film Physics and Applications; 69842R (2008) https://doi.org/10.1117/12.792272
Event: Sixth International Conference on Thin Film Physics and Applications, 2007, Shanghai, China
Abstract
Wurtzite structure ZnMgO thin films with the energy gap (Eg) of 4.2 eV were deposited by oxygen-plasma enhanced pulsed laser deposition (PEPLD) on quartz glass. Oxygen-plasma increases the Zn content in ZnMgO thin film, which induced the evolution from cubic to hexagonal structure. The effects of target-substrate (T-S) distance on the band gap and crystal quality of ZnMgO thin film deposited by PEPLD were studied by transmittance spectra and Raman. The band gap of ZnMgO increased from 3.84 eV to 4.03 eV and the crystal quality decrease gradually when the T-S distance decreased from 9 cm to 5 cm.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yanfei Gu, Xiaomin Li, J. F. Kong, C. Yang, W. Z. Shen, Y. W. Zhang, W. D. Yu, and X. D. Gao "Wurtzite structure high Mg content ZnMgO thin films deposited by oxygen-plasma enhanced pulsed laser deposition", Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69842R (11 March 2008); https://doi.org/10.1117/12.792272
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KEYWORDS
Magnesium

Thin films

Oxygen

Pulsed laser deposition

Crystals

Zinc

Zinc oxide

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