Pulsed laser deposition and e-beam evaporation of vanadium dioxide thin films for IR-photonics applications

S. Heinilehto; J. Lappalainen; V. Lantto; H. Jantunen

doi:10.1117/12.804119

5 June 2008 Pulsed laser deposition and e-beam evaporation of vanadium dioxide thin films for IR-photonics applications

S. Heinilehto, J. Lappalainen, V. Lantto, H. Jantunen

Proceedings Volume 7022, Advanced Laser Technologies 2007; 70221G (2008) https://doi.org/10.1117/12.804119
Event: Advanced Laser Technologies 2007, 2007, Levi, Finland

Abstract

Vanadium dioxide thin films were prepared on r-plane sapphire substrates by using in-situ pulsed laser deposition (PLD) and by post-annealing pure metallic vanadium films in synthetic air atmosphere by varying the annealing temperature and annealing time. As a result, vanadium oxide thin films with various compositions were produced. Thin films produced by using PLD contained also pure VO₂ thin films, while post-annealed films had mixed phase structure of metallic vanadium and vanadium oxides or only different vanadium oxides. SPM surface analysis showed that pulsed laser deposited films were very smooth with R_q < 16.7 nm. The magnitude of metal-insulator transition (MIT) of the optical transmission measured from pulsed laser deposited VO₂ thin films was around 50% at the wavelengths of 1.5 and 2.5 μm. Surface roughness of the post-annealed films was high, R_q < 86.1 nm. Although the post-annealed films were non-homogenous phase mixtures containing very little VO₂ phase in their structure, some of them showed very good optical responses at IR-wavelengths. At the wavelength of 2.5 μm, optical transition between insulator and conductive states as large as 74% was measured.

Citation Download Citation

S. Heinilehto, J. Lappalainen, V. Lantto, and H. Jantunen "Pulsed laser deposition and e-beam evaporation of vanadium dioxide thin films for IR-photonics applications", Proc. SPIE 7022, Advanced Laser Technologies 2007, 70221G (5 June 2008); https://doi.org/10.1117/12.804119

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