Manipulation of individual electronic spins in semiconductors

Craig E. Pryor; Joseph Pingenot; Amrit De; Michael E. Flatté

doi:10.1117/12.801697

4 September 2008 Manipulation of individual electronic spins in semiconductors

Craig E. Pryor, Joseph Pingenot, Amrit De, Michael E. Flatté

Proceedings Volume 7036, Spintronics; 70361A (2008) https://doi.org/10.1117/12.801697
Event: NanoScience + Engineering, 2008, San Diego, California, United States

Abstract

Manipulating individual spins in a solid, such as for quantum information processing or a spintronic device, requires the ability to quickly and coherently reorient a spin while leaving its neighbors unaffected. Using traditional electron spin resonance methods is problematic because of the difficulty of confining oscillating magnetic fields to small volumes. In contrast, g-tensor modulation resonance, which has been demonstrated in quantum wells, uses the electric field to exploit differences in the spin-orbit interaction in and around the confining structure and should be scalable. I will present theoretical calculations of g-tensor modulation resonance spin manipulation in quantum dots and donors and show that such schemes are feasible for manipulation of single spins. For InAs/GaAs quantum dots it is possible to rapidly reorient the spin in an arbitrary direction with only the application of a static magnetic field and the application of pulsed electric fields from a gate. Donors behave much like quantum dots, with the advantage that they do not suffer from variations in composition and size.

Citation Download Citation

Craig E. Pryor, Joseph Pingenot, Amrit De, and Michael E. Flatté "Manipulation of individual electronic spins in semiconductors", Proc. SPIE 7036, Spintronics, 70361A (4 September 2008); https://doi.org/10.1117/12.801697

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