Paper
10 September 2008 Simulation of the InGaN-based tandem solar cells
Xiaoming Shen, Shuo Lin, Fubin Li, Yiming Wei, Shuiku Zhong, Haibin Wan, Jiangong Li
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Abstract
In this work, key properties of InxGa1-xN tandem solar cells (SCs) (single junction, double junctions and triple junctions) were simulated by employing AMPS-1D software, including I-V characteristic, efficiency, band structure, built-in electric field etc. We compared the results of our simulation with the results of other theoretical calculations published in the literature and analysed the causes of the differences among these results. We try to find some useful information related to the important parameters of InGaN SCs, such as the band gap configuration and thickness selection. This work may help the progress in the preparation of the InGaN-based high efficiency solar cells.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xiaoming Shen, Shuo Lin, Fubin Li, Yiming Wei, Shuiku Zhong, Haibin Wan, and Jiangong Li "Simulation of the InGaN-based tandem solar cells", Proc. SPIE 7045, Photovoltaic Cell and Module Technologies II, 70450E (10 September 2008); https://doi.org/10.1117/12.793997
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Cited by 24 scholarly publications.
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KEYWORDS
Indium gallium nitride

Solar cells

Tandem solar cells

Doping

Semiconductors

Indium nitride

Band structure simulations

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