Paper
18 November 2008 Investigation of GaN layers doped with Er3+ and Er3+ + Yb3+ ions using the transmittance measurement
Václav Prajzler, Ivan Hüttel, Jarmila Spirková, Jirí Oswald, Vratislav Perina, Vitezslav Jerábek
Author Affiliations +
Proceedings Volume 7138, Photonics, Devices, and Systems IV; 71381B (2008) https://doi.org/10.1117/12.818015
Event: Photonics, Devices, and Systems IV, 2008, Prague, Czech Republic
Abstract
We report about fabrication and properties of Gallium Nitride (GaN) layers doped with erbium or mixture of erbium and ytterbium ions. Transmission spectra in the spectral range from 280 to 800 nm taken by the spectrometer Varian Cary 50 showed that the increasing concentration of the dopants shifts the absorption edge to the lower wavelengths. Optical band gap Eg was determined from the absorption coefficient values using Tauc's procedure and the obtained values varied from 3.08 eV to 3.89 eV depending on the erbium or erbium plus ytterbium doping. Photoluminescence emission at 1 530 nm due to the Er3+ intra-4f 4I13/24I15/2 transition was observed by using excitation of semiconductor lasers operating at 980 nm.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Václav Prajzler, Ivan Hüttel, Jarmila Spirková, Jirí Oswald, Vratislav Perina, and Vitezslav Jerábek "Investigation of GaN layers doped with Er3+ and Er3+ + Yb3+ ions using the transmittance measurement", Proc. SPIE 7138, Photonics, Devices, and Systems IV, 71381B (18 November 2008); https://doi.org/10.1117/12.818015
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KEYWORDS
Gallium nitride

Erbium

Ytterbium

Absorption

Ions

Doping

Luminescence

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