Preparation and properties of hybrid bilayer structures based on organic Alq3, ferromagnetic La[sub]2/3[/sub]Sr[sub]1/3[/sub]MnO[sub]3[/sub] and Fe[sub]3[/sub]O[sub]4[/sub]

B. Vengalis; K. Šliužienė; I. Černiukė; R. Butkutė; V. Lisauskas; A. Maneikis

doi:10.1117/12.815942

2 December 2008 Preparation and properties of hybrid bilayer structures based on organic Alq3, ferromagnetic La_2/3Sr_1/3MnO₃ and Fe₃O₄

B. Vengalis, K. Šliužienė, I. Černiukė, R. Butkutė, V. Lisauskas, A. Maneikis

Author Affiliations +

Proceedings Volume 7142, Sixth International Conference on Advanced Optical Materials and Devices (AOMD-6); 71420V (2008) https://doi.org/10.1117/12.815942
Event: Sixth International Conference on Advanced Optical Materials and Devices, 2008, Riga, Latvia

Abstract

We report preparation and properties of hybrid bilayer structures composed of the organic semiconductor, 8-hydroxyquinoline aluminum (Alq3), p-type Si and two ferromagnetic oxides, namely, colossal magnetoresistance manganite, La_2/3Sr_1/3MnO₃ (LSMO), and magnetite (Fe₃O₄). Thin Alq3 films were thermally evaporated in vacuum. The bottom LSMO films were grown in-situ at 750°C by dc magnetron sputtering on crystalline SrTiO₃ while Fe₃O₄ films were magnetron sputtered at 400°C on glass. Current versus voltage in a case of vertical current flow has been investigated for the heterojunctions. The investigations revealed dominating role of thermoionic emission in a barrier of Schottky type for the Alq3/p-Si heterojunction while a mechanism based on carrier tunnelling through an interface and space charge limited current processes were considered to explain nonlinear electrical transport in the Alq3/LSMO, Alq3/ Fe₃O₄ heterojunctions. The Alq3/LSMO demonstrated magnetoresistance values up to 11 % (at T=240 K and B=1 T).

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B. Vengalis, K. Šliužienė, I. Černiukė, R. Butkutė, V. Lisauskas, and A. Maneikis "Preparation and properties of hybrid bilayer structures based on organic Alq3, ferromagnetic La_2/3Sr_1/3MnO₃ and Fe₃O₄", Proc. SPIE 7142, Sixth International Conference on Advanced Optical Materials and Devices (AOMD-6), 71420V (2 December 2008); https://doi.org/10.1117/12.815942

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